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采用CdTe透明衬底上液相外延的Hg_(1-x)Cd_xTe(x=0.446)制成了λ_0=2.5μm的32×32元HgCdTe焦平面阵列,以装备地球资源勘测用的机载成像分光仪。在外延片的一角取很小的面积来制作二极管,凡二极管具有良好光电性能的外延片便可用来制作阵列。光伏探测器阵列采用平面工艺制造,其n_-~+p结通过硼离子注入法形成,并采用了ZnS钝化层。各阵列元上生长了供混合集成用的铟柱。阵列规模为32×32元,阵列元尺寸68μm。
A 32 × 32 element HgCdTe focal plane array with λ_0 = 2.5μm was fabricated by liquid-phase epitaxial Hg_ (1-x) Cd_xTe (x = 0.446) on a CdTe transparent substrate to equip the airborne imaging spectrometer instrument. In the corner of the epitaxial wafer to take a small area to make diodes, where the diode has good optoelectronic properties of epitaxial wafers can be used to make an array. Photovoltaic detector arrays are fabricated using a planar process. The n_- ~ + p junction is formed by boron ion implantation using a ZnS passivation layer. Indium columns for hybrid integration were grown on each array element. The array size is 32 × 32 yuan and the array element size is 68 μm.