论文部分内容阅读
用红外光谱、背散射能谱和电子自旋共振波谱研究了不同淀积条件下生长的PECVD氮化硅膜中的氢键,Si/N比和硅悬挂键。对薄膜在不同温度、氮气保护下退火后的氢键及硅悬挂键的变化也进行了测试和分析。
The hydrogen bonding, Si / N ratio and silicon dangling bonds in PECVD silicon nitride films grown under different deposition conditions were studied by infrared spectroscopy, backscattering spectroscopy and electron spin resonance spectroscopy. The hydrogen bonding and the dangling bonds of silicon after annealed at different temperatures and nitrogen were also tested and analyzed.