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最近几年,美国伊利诺斯大学香槟分校(UIUC)的Milton Feng领导着晶体管速度方面的研究,HBT器件在室温下速度提高到了800GHz。但2007年12月诺.格空间技术公司的Richard Lai在国际电子器件会议(IEDM)上宣称,他们研制的InP HEMT已经超过了1THz。Lai小组多年来一直进行雷达方面的研
In recent years, Milton Feng of the University of Illinois at Urbana-Champaign (UIUC) led the research on transistor speed. The HBT device has been raised to 800 GHz at room temperature. However, Richard Lai of Novartis Space Technologies announced in December 2007 at the International Electron Devices Conference (IEDM) that they have developed InP HEMTs in excess of 1 THz. The Lai team has been conducting radar research for many years