研制了一种钽吸收体图形的 x 射线掩模。为了制作钽吸收体图形,采用了反应离子刻蚀全干式工艺,这样不仅使得亚微米图形成形极为精确,而且简化了掩模制造过程。精确地控制好射频溅射时的氩气压,使钽膜的应力保持在±10kg/mm~2以内。在制作吸收体图形时,采用中间体 SiO_2层作为腐蚀掩蔽层,用反应溅射腐蚀的方法得到了高于10的 Ta/PMMA 腐蚀选择比,获得了高反差的亚微米 x 射线掩模,最小图形宽度为0.2μm、最大高宽比大于3。 A tantalum absorber patterned x-ray mask was developed. In order to make tantalum absorber patterns, Reactive Ion Etch dry-process is used, which not only makes the sub-micron patterning extremely accurate, but also simplifies the mask manufacturing process. Accurately control the RF sputtering RF pressure, the tantalum film to keep the stress within ± 10kg / mm ~ 2 or less. In the production of absorber pattern, the intermediate SiO 2 layer was used as the etching mask, and the corrosion selectivity of Ta / PMMA higher than 10 was obtained by reactive sputter etching. The submicron x-ray mask with high contrast was obtained, Graphic width of 0.2μm, the maximum aspect ratio greater than 3.