Two kinds of Cu diffusion barrier layers, sealedfilms and capped fi1ms, on nanoporous low-dielectric-constant filmsare investigated by positronium annihilation lifetime spectroscopy (PALS). We have found that the minimumthickness of Ta to form an effective diffusion barrier is affected by the pore size. The films with large poresrequire thick barrier layers to form effective diffusion barriers. In addition, a possible ultra-thin diffusion barrier,i.e. a plasma-induced densification layer, has also been investigated. The PALS data confirm that a porouslow-dielectric-constant thin film can be shrunk by exposure to plasma. This shrinkage is confined to a surfacelayer of collapsed pores and forms a dense layer. The dense layer tends to behave as Ps (positronium) diffusionbarriers. Indeed, the controlled thin "skin" layer could prevent Cu diffusion into the underlying dielectrics.