用金属氧化物半导体(MOS)晶体管模型取代传统Colpitts混沌振荡电路中的三极管模型,提出了一种基于MOS管的Colpitts混沌振荡电路.通过合适的归一化方法,得到了与基于三极管电路类似的状态模型.平衡点的指标说明两种结构产生混沌的机理并不相同.然后,通过参数反演,得到了详细的电路参数,并用Pspice软件仿真得到了混沌吸引子和混沌信号的频谱图,说明了此结构可在低电压下工作并且能产生高频率的混沌信号.最后,用误差反馈的方法实现了这种结构的同步. A MOS transistor-based Colpitts chaotic oscillator circuit is proposed by replacing the transistor model of the traditional Colpitts chaotic oscillator with a metal-oxide-semiconductor (MOS) transistor model. A proper normalization method is used to obtain a similar transistor- State model.The index of the equilibrium point shows that the chaos mechanism of the two kinds of structures is not the same.Thirdly, the detailed circuit parameters are obtained by parameter inversion, and the spectrum of chaotic attractor and chaotic signal is simulated by Pspice software, This structure can work under low voltage and can generate high frequency chaotic signal.Finally, the error feedback method to achieve this structure synchronization.