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为研究VLSI金属互连线的应力导致IC器件失效的问题,采用同步辐射源X射线衍射技术,原位测试了VLSI中Al互连线在电迁徙及加热条件下的应力变化.沉积态的Al互连线在室温下为拉应力.退火过程使拉应力逐渐减小,在300～350℃过程中由拉应力转为压应力.在电流密度为(3×105～4×106)A/cm2,275min的电徙动实验过程中,Al互连线阳极端由拉应力转变为压应力,并随后随着电流密度的增加而增加.此外,采用扫描电镜(SEM)观察了Al互连线的电迁徙失效特征及应力释放过程.
In order to study the failure of IC devices caused by the stress of VLSI metal interconnects, the stress changes of Al interconnects in VLSI under electromigration and heating were tested in situ using synchrotron radiation X-ray diffraction technique. The interconnection line is tensile stress at room temperature.The tensile stress is gradually reduced during the annealing process, and the stress is converted from tensile stress to compressive stress in the process of 300 ~ 350 ℃ .At the current density of (3 × 105 ~ 4 × 106) A / cm2 , 275min electrical migration experiment, Al interconnection line anode by the tensile stress into compressive stress, and then with the current density increases.In addition, the use of scanning electron microscopy (SEM) observed Al interconnection line Electromigration Migration Characteristics and Stress Release Process.