制备了透射式 Ga As阴极组件 ,测量了 Ga As阴极激活过程中阴极光电灵敏度和发射电子平均横向能量随激活时间的变化 ,用扫描电镜观察 Ga As(Cs,O)阴极表面形貌 ,结果表明 :Ga As(Cs,O)阴极发射电子横向能量取决于 Ga As晶格温度、阴极表面形貌和电子在能带弯曲区的多次散射 ,与 (Cs,O)激活层无关 . The transmissive Ga As cathode assembly was prepared. The changes of the cathode photoelectric sensitivity and the average transverse electron emission energy with activation time were measured during GaAs cathode activation. The surface morphology of Ga As (Cs, O) cathode was observed by scanning electron microscopy. : The lateral electron energy of GaAs (Cs, O) cathode depends on the GaAs lattice temperature, the morphology of the cathode surface and the multiple scattering of the electrons in the bend region of the band, independent of the (Cs, O) active layer.