论文部分内容阅读
采用凹形氧化层的数字双极微电路已测得低至5k拉德(Si)的总剂量失效。典型的失效在10-100k拉德(Si)范围。发现失效与辐射时的偏压条件和辐射后的退火时间有密切关系。此外,还观察到低于100k拉德(Si)的总剂量“窗口”。辐射失效机理主要是凹形场氧化层底部或者氧化层边壁上的p型硅的反型,前者反型使隐埋层之间产生沟道效应,后者反型造成集电极至发射极的漏电。此外,在一种非隔离形式的集成注入逻辑中观察到了边壁电流增大引起的一种失效模式。几家厂商对于辐射加固方法都进行了鉴定和研究。器件失效程度发现视加工批次和设计修正而定会相差几个数量级。
Digital bipolar microcircuits with a concave oxide layer have measured total dose failure down to 5 krads (Si). Typical failures range from 10-100 krad (Si). It is found that the failure conditions and the bias conditions when irradiated are closely related to the annealing time after radiation. In addition, a total dose of “window” below 100 krads (Si) was also observed. The mechanism of radiation failure is mainly the inversion of the p-type silicon at the bottom of the oxide field or the oxide layer. The former inversion mode causes the tunneling effect between the buried layers, which results in the collector-emitter Leakage. In addition, a failure mode caused by increased wall current was observed in a non-isolated form of integrated injection logic. Several manufacturers have identified and studied radiation-hardening methods. The degree of device failure found depending on the processing batch and design changes will be a few orders of magnitude difference.