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本文在无限小的沟道宽度—高度比的假设下,以及通过引入依赖于漏电流的有效杂质浓度对有限的沟道宽度作了修正之后,推导了结型场效应晶体管的栅与漏之间的沟道部份电场分布的近似解析式。这一近似式也可以应用于栅边缘曲率为零的极端情况,即肖特基势垒栅的情况。根据参考资料报导的在大的漏电压下栅电流增强的实验数据,采用理论的电场分布来求解碰撞电离系数,此系数与参考资料上发表的根据本体碰撞电离推出的数据相一致。
In this paper, the finite channel width is modified under the assumption of an infinitely small channel width-height ratio and by introducing an effective impurity concentration dependent on the leakage current, the relationship between the gate and drain of a junction field effect transistor Approximate Analytical Formula of Channel Partial Electric Field Distribution. This approximation can also be applied to the extreme case where the curvature of the gate edge is zero, the case of a Schottky barrier. According to the experimental data reported in the references for enhanced gate current at large drain voltage, the theoretical electric field distribution is used to solve for the impact ionization coefficient, which is consistent with the published data based on bulk impact ionization published in the references.