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研究了SC-1清洗过程对重掺硼和轻掺硼硅片表面颗粒、微粗糙度的影响及其清洗后硅片表面化学组态分布,采用表面颗粒激光扫描仪、原子力显微镜及X射线光电子能谱(XPS)对重掺硼和轻掺硼硅片在SC-1清洗过程中表现的不同清洗特性进行分析。结果表明:在SC-1清洗中,重掺硼硅片表面更容易吸附颗粒,需要更长的清洗时间来得到清洁表面;随清洗时间延长,重轻掺硅片表面微粗糙度均有增大趋势,且重掺硼硅片表面微粗糙度始终比轻掺硼硅片大,通过表面高度结果可知,相同清洗条件下,重掺硼硅片表面纵向腐蚀深度比轻掺硼大0.3 nm,与(111)面的晶面间距相近;XPS结果显示重掺硼硅单晶中大量硼原子的引入对SC-1清洗过程中的各向异性腐蚀有一定的增强效果,适当改变SC-1清洗中的氧化剂的含量有助于得到更好的表面质量。
The effects of SC-1 cleaning process on the particle size and micro-roughness of the surface of the heavily boron-doped and light boron-doped silicon wafers and the chemical distribution of the surface of the wafers after cleaning were studied. The surface particle laser scanner, atomic force microscope and X-ray photoelectron Energy dispersive spectroscopy (XPS) analyzes the different cleaning characteristics exhibited by the heavily boron-doped and light-boron-doped wafers during SC-1 cleaning. The results show that in SC-1 cleaning, the surface of heavily boron doped silicon is more likely to adsorb particles and longer cleaning time is required to obtain a clean surface. As the cleaning time prolongs, the micro-roughness of the surface of heavy silica doped wafer increases The surface roughness of heavily boron doped silicon wafer is always larger than that of light boron doped silicon wafer. The results of surface height show that under the same cleaning conditions, the longitudinal erosion depth of heavily boron doped silicon wafer is 0.3 nm larger than that of light boron doped silicon wafer (111) plane. The XPS results show that the introduction of a large amount of boron atoms in the heavily boron-doped silicon single crystal enhances the anisotropic corrosion in the SC-1 cleaning process. The SC-1 cleaning The content of oxidant contributes to a better surface quality.