拥有介质/金属/介质结构的透明导电多层膜的光学与电学性能优于单层透明导电氧化物膜或金属膜,且能够在低温下制备。采用磁控溅射室温制备ZnO/Ag/SiN透明导电多层膜,并进行变角度椭圆偏振光谱测量。对单层膜建立物理模型并进行拟合,获得每层膜的折射率与消光系数。由单层膜模型组建多层膜模型,使多层膜的椭圆偏振光谱拟合值与实测值相吻合。拟合结果表明,不同O_2和Ar流量比条件下制备衬底层ZnO时,功能层Ag的Drude模型中载流子浓度几乎不变,而迁移率不同。当O_2和Ar流量比使ZnO处于氧化态时,Ag层的迁移率最高,由X射线衍射分析发现,此时Ag层具有最强的结晶强度与择优取向。 The optical and electrical properties of a transparent conductive multi-layer film having a dielectric / metal / dielectric structure are superior to that of a single layer of a transparent conductive oxide film or a metal film and can be prepared at a low temperature. The ZnO / Ag / SiN transparent conductive multilayers were prepared by magnetron sputtering at room temperature, and were measured by variable angle ellipsometry. The physical model of the monolayer film was established and fitted to obtain the refractive index and extinction coefficient of each film. The multi-layer film model is established by the single-layer film model, which makes the fitted value of ellipsometry of multi-layer film coincide with the measured value. The fitting results show that when the substrate ZnO is prepared under the different O_2 and Ar flux ratios, the carrier concentration in the Drude model of the functional layer Ag almost does not change but the mobility is different. The mobility of Ag layer is the highest when the flow ratio of O_2 and Ar is in the oxidation state. The X-ray diffraction analysis shows that the Ag layer has the strongest crystallinity and the preferred orientation.