Growth of semi-polar (1-101)GaN has been attempted on a patterned (001) silicon substrate adopting selective area MOVPE. The growth was initiated on (111) facets of the Si,which had been prepared by anisotropy etching in a KOH solution. A uniform semi-polar layer was achieved by coalescence of stripes. Since the growth was performed on facets,the surface was atomically flat in AFM surface analyses. By using a high temperature grown AlN nucleation layer,we achieved low threading dislocation density at the top most surface. Moreover,by tilting the c-axis of the GaN on the Si substrate,the effect of the thermal expansion coefficient mismatch was much reduced. As the result,we achieved a crack free (1-101)GaN template on (001)Si. On the thus prepared (1-101)GaN,a GaInN/GaN LED was fabricated,which showed excellent performance with weak quantum confined Stark effect. Growth of semi-polar (1-101) GaN has been attempted on a patterned (001) silicon substrate in selective area MOVPE. The growth was semi-polar (1-10) GaN has been coated on a patterned A uniform semi-polar layer was achieved by coalescence of stripes. The use of high temperature grown AlN nucleation layers, we achieved low threading dislocation density at the top most surface. Moreover, by tilting the c-axis of the GaN on the Si substrate, the effect of the thermal expansion coefficient mismatch was much reduced. As the result, we achieved a crack free (1-101) GaN template on (001) Si. On the thus prepared (1-101) GaN, a GaInN / GaN LED was fabricated, which showed excellent performance with weak quantum confined Stark effect.