据《ＳｅｍｉｃｏｎｄｕｃｔｏｒＷｏｒｌｄ》１９９９年第２期报道。日本东芝公司开发了横向Ｓｉ双极晶体管，用于第三代移动通信系统。该器件在厚度为４００ｎｍ的Ｓｉ氧化膜上形成厚度为１００ｎｍ单晶硅ＳＯＩ衬底，然后在该衬底上形成横向发射极、基极和集电极。这样可降 According to “SemiconductorWorld” 1999 the second period report. Toshiba Japan has developed a lateral Si bipolar transistor for third generation mobile communication systems. The device forms a monocrystalline silicon SOI substrate with a thickness of 100 nm on a Si oxide film with a thickness of 400 nm and then forms a lateral emitter, a base electrode and a collector electrode on the substrate. This can be reduced