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在Ga-HCl-NH_3-Ar系统中,做了多种生长参量变化对GaN晶体形貌影响的规律实验。结果表明,在其它生长条件固定的情况下,HCl的流量在15.8～21ml/min的范围内时,GaN晶体表面的生长坑大小与深度随HCl流量的增加而增大,反之则减小。而当HCl流量小于15.8ml/min时,生长的GaN膜逐渐成为多坑与多晶状。当大于21ml/min时,GaN膜的表面则逐渐出现丘锥体及多晶。经霍耳测量,样片的电子迁移率平均在116cm~2/V·s左右,最高的可达462cm~2/V·s。在HCl流量15.8～21ml/min的范围内,能重复生长出理想的n-GaN。
In Ga-HCl-NH_3-Ar system, a variety of growth parameters of GaN crystal morphology of the regular experiment. The results show that when the flow rate of HCl is in the range of 15.8-21ml / min, the growth pit size and depth of GaN crystal surface increase with the increase of HCl flow rate under other growth conditions, otherwise, it decreases. When the HCl flow rate is less than 15.8ml / min, the growth of GaN film gradually become multi-pit and polycrystalline. When it is more than 21ml / min, the surface of the GaN film gradually appears mound and polycrystal. After Hall measurement, the average electron mobility of the samples is about 116cm ~ 2 / V · s, the highest up to 462cm ~ 2 / V · s. In the HCl flow rate of 15.8 ~ 21ml / min, the ideal growth of n-GaN can be repeated.