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A strain-compensated In P-based In Ga As/In Al As quantum cascade detector grown by solid source molecular beam epitaxy is demonstrated. The device operates at 4.3 m up to room temperature(300 K) with a responsivity of 1.27 m A/W and a Johnson noise limited detectivity of 1.02 107 cm Hz1=2/W. At 80 K, the responsivity and detectivity are 14.55 m A/W and 1.26 1010 cm Hz1=2/W, respectively. According to the response range, this detector is much suitable for greenhouse gas detection.
A strain-compensated In P-based In Ga As / In Al As quantum cascade detector grown by solid source molecular beam epitaxy is demonstrated. The device operates at 4.3 m up to room temperature (300 K) with a responsivity of 1.27 m A / W and a Johnson noise limited detectivity of 1.02 107 cm Hz1 = 2 / W. At 80 K, the responsivity and detectivity are 14.55 m A / W and 1.26 1010 cm Hz1 = 2 / W, respectively. According to the response range, this detector is much suitable for greenhouse gas detection.