一、前言 磷扩散是半导体器件和集成电路的基本工艺之一,磷扩散的分布状况对半导体器件和集成电路的性能、成品率有很大影响。半导体集成电路的集成度已发展到扩散条宽为2～3微米的大规模、超大规模集成电路,对磷扩散掺杂的精确控制,均匀性和重复性,提出了更高的要求,常用的液态三氯氧磷源不能完全满足这些需要。研究和发展新的磷扩散源,是国内外半导体工业普遍重视的问题。 一九六七年RCA公司发明用片状氮化硼作扩散源有许多优越性以来,人们就开始研究和发展片状磷源,到一九七六年美国Owens-Illinois公司发表了片状磷源的专 I. Introduction Phosphorus diffusion is one of the basic processes of semiconductor devices and integrated circuits. The distribution of phosphorus diffusion has a great influence on the performance and yield of semiconductor devices and integrated circuits. The integration of semiconductor integrated circuits has been developed to large-scale, very large-scale integrated circuits with diffusion stripe width of 2 to 3 microns, putting forward higher requirements on the precise control, uniformity and repeatability of phosphorus diffusion doping. Commonly used Liquid phosphorus oxychloride sources do not fully meet these needs. Research and development of a new source of phosphorus diffusion is a common concern in the semiconductor industry at home and abroad. Since 1967, when RCA invented many advantages of using flake boron nitride as a diffusion source, people began to study and develop flaky phosphorus sources. By 1976, Owens-Illinois Company published flaky phosphorus Source of expertise