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使用GaAlAs/GaAs,GaAlSb/GaSb,GaAlAsSb/GaAseSb和InGaAsP/InP等几种Ⅲ—v族合金系已成功地制成了异质结雪崩光电二极管·这些二极管复盖电光波长从0.4um到1.8um,早期发展阶段显示出令人鼓舞的结果,并得出小于35ps的高速响应和大于95%的高量子效率。本文还将对暗电流和过分的雪崩噪声进行讨论,并对GaAlSb,GaAlAsSb和InGaAsP雪崩光电二极管直接进行比较·
Heterojunction avalanche photodiodes have been successfully fabricated using several III-V family of alloys such as GaAlAs / GaAs, GaAlSb / GaSb, GaAlAsSb / GaAseSb and InGaAsP / InP · These diodes cover electro-optical wavelengths from 0.4um to 1.8um , Early stages of development showed encouraging results and resulted in high-speed responses of less than 35 ps and high quantum efficiencies of greater than 95%. This article will also discuss dark current and excessive avalanche noise and compare GaAlSb, GaAlAsSb, and InGaAsP avalanche photodiodes directly