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利用成本低廉的液相外延技术,成功制备了具有金属-绝缘体-半导体结构的HgCdTe场效应管器件.在该器件中,观察到清晰的Shubnikov-de Hass振荡和量子霍尔平台,证明样品具有较高的质量.测量零场附近的磁阻曲线,在HgCdTe-基器件中观察到反弱局域效应,表明样品中存在较强的自旋-轨道耦合作用.利用Iordanskii-Lyanda-Pikus理论,很好地拟合了反弱局域曲线.由拟合得到的自旋分裂能随电子浓度的增大而增大,最大达到9.06 meV根据自旋分裂能得到的自旋-轨道耦合系数同样随电子浓度的增大而增大,与沟道较宽的量子阱中所得到的结果相反.
The HgCdTe FET with metal-insulator-semiconductor structure has been successfully fabricated by low-cost liquid-phase epitaxy, in which a clear Shubnikov-de Hass oscillation and quantum Hall platform are observed, demonstrating that the sample has better performance High mass.The magnetoresistance curves near zero field were measured and the anti-weak local effect was observed in HgCdTe-based devices, indicating strong spin-orbit coupling in samples.Using Iordanskii-Lyanda-Pikus theory, Well fit the anti-weak local curve.The spin-splitting energy obtained by the fitting increases with the increase of the electron concentration, up to 9.06 meV spin-orbit coupling can get the same spin-orbit coupling coefficient with the electron The increase in concentration increases, in contrast to the one obtained in a wider channel quantum well.