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引言SnO_2是一种宽半导体带隙材料(Eg～3.5eV),对Ⅲ,Ⅴ族元素掺杂有效。在可见光波段的透明度高(折射系数 n～1.9),在室温下对酸和碱的抗腐蚀能力强,可用于制做光电极、电阻器、透明加热元件、透明抗反射镀层以及多种器件的环境保护。采用 MOCVD 技术生长 SnO_2薄膜,是七十年代初开始的。最早是 Aoki 和 Sasahur-a 及 Muto 和 Furuuchi,用二甲基氯化锡为物质源(MO)进行化学气相沉积(CVD)制备 SnO_2 薄膜。后来人们采用了四甲基锡 Sn(CH_3)_4为制备薄膜的物质
Introduction SnO 2 is a wide bandgap semiconductor material (Eg ~ 3.5eV) that is effective for the doping of III and V group elements. High transparency in the visible light band (refractive index n ~ 1.9), strong resistance to acids and alkalis at room temperature, can be used to make photoelectrodes, resistors, transparent heating elements, transparent anti-reflective coatings and a variety of devices Environmental protection. The growth of SnO 2 thin films by MOCVD is the beginning of the seventies. The earliest Aoki and Sasahur-a and Muto and Furuuchi, the use of dimethyl tin chloride as a material source (MO) for chemical vapor deposition (CVD) SnO 2 film. Later, people used tetramethyltin Sn (CH_3) _4 for the preparation of film material