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在90nm和65nm技术节点,集成电路制造业的投资剧增而随机成品率却在下降低.为了提升随机成品率,带权关键面积的(WCA)计算和排序是关键.文中基于数学形态学提出了一种随机缺陷轮廓的WCA新模型,该模型不仅考虑了90nm和65nm工艺中缺陷在布线区域和空白区域的不同密度,而且也考虑了缺陷在粒径上的分布特性;同时还设计并实现了与新模型对应的WCA提取与排序算法,部分版图上的实验结果表明新WCA可以作为版图优化的代价函数,从而为随机缺陷的版图优化提供了精确依据.
At the 90nm and 65nm technology nodes, the investment in integrated circuit manufacturing is increasing sharply while the stochastic yield is dropping lower.In order to improve random yield, weighted critical area (WCA) calculation and ranking are the key.Based on mathematical morphology A new model of WCA with random defect profile is proposed. The model considers not only the different densities of the defects in the wiring region and the blank region in the 90nm and 65nm processes, but also the distribution characteristics of the defects in the particle size. At the same time, The WCA extraction and sorting algorithm corresponding to the new model, the experimental results on some layouts show that the new WCA can be used as the cost function of layout optimization, which provides an accurate basis for layout optimization of random defects.