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以往,为制备优质薄层晶体和生长层,常用汽相或液相外延生长法。例如液相生长,一般用倾斜法和浸渍法,让溶液复盖在衬底上使它生长少许晶体后将溶液退回到原处。为了既能保证材料的组分又可制备多层结构,就采用把各种组分的溶液装入到多层贮存箱中使之滑动的方法。不管用那种方法,制备非常薄的生长层(1微米以下)都是困难的。另外晶体生长结束后要完全除去溶液也是困难的。还有伴随表面损伤、表面不完整性等许多问题。
In the past, in order to prepare high-quality thin-layer crystals and growth layers, vapor-phase or liquid-phase epitaxial growth was commonly used. For example, the liquid phase growth, usually by tilting and dipping method, the solution coated on the substrate so that it grow a little crystal after the solution returned to the original place. In order to ensure that both the material components and the multi-layer structure can be prepared, a method of sliding the solution of each component into a multi-layered container is adopted. Regardless of the method, it is difficult to prepare very thin growth layers (below 1 micron). It is also difficult to completely remove the solution after the crystal growth has ended. There are many problems associated with surface damage, surface imperfections and the like.