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采用模拟计算的方法,运用量子点模型对GaN基LED器件中不同尺寸量子点的电致发光光谱进行模拟分析,并对器件结构中电子空穴浓度,辐射复合强度进行了研究.分析结果显示,随着量子点尺寸的增大,量子点发光波长存在红移,当圆柱状量子点半径从1.8nm增长到13nm时,波长红移309.6meV,在量子阱中生长单一尺寸的量子点可以达到不同波长的单色发光器件,而在不同量子阱中生长不同尺寸的量子点可以实现多波长发光,以及单颗LED的白色显示,并通过调节量子点的分布密度达到调节各发光波长强度的目的.结果表明,量子点分布密度调节之后多波长发光均匀性得到有效改善.
The quantum dot model was used to simulate the electroluminescence spectra of different size quantum dots in GaN-based LED devices and the electron-hole concentration and the radiation recombination intensity in the device structure were studied by using the simulation method.The results show that, As the quantum dot size increases, there is a red shift of the emission wavelength of the quantum dot. When the radius of the cylindrical quantum dot increases from 1.8 nm to 13 nm, the wavelength is red shifted by 309.6 meV, and the growth of quantum dots with a single size in the quantum well can be achieved Wavelength monochromatic light-emitting devices, and the growth of quantum dots of different sizes in different quantum wells can achieve multi-wavelength light emission and white display of a single LED and achieve the purpose of adjusting the intensity of each light-emitting wavelength by adjusting the distribution density of quantum dots. The results show that the multi-wavelength luminescence uniformity is effectively improved after the quantum dot density is adjusted.