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利用自行研制的超净低温低真空化学气相外延系统，应用锗烷和硅烷气体，在２ 英寸到３英寸的衬底硅片上生长了锗硅异质结外延层。在６６５ ℃，６１０ ℃和５７５℃不同温度分别生长了Ｓｉ０－８Ｇｅ０－２ ，Ｓｉ０－５ Ｇｅ０－５ 和Ｓｉ０－６５Ｇｅ０－３５ 的异质外延层，获得了原子级表面和界面的异质外延材料。结果表明：外延生长速率和Ｇｅ 组分由硅烷和锗烷的分压及生长时的温度控制。并利用Ｘ 射线双晶衍射，扩展电阻和电化学ＣＶ 法研究了ＧｅＳｉ 异质外延层的特性
Using self-developed ultra-clean low-temperature low-vacuum chemical vapor phase epitaxy system, germanium-silicon heterojunction epitaxial layers were grown on substrate silicon wafers from 2 inches to 3 inches using germane and silane gas. The heteroepitaxial layers of Si0-8Ge0-2, Si0-5Ge0-5 and Si0-65Ge0-35 were grown at different temperatures of 665 ℃, 610 ℃ and 575 ℃ respectively, and the heterogeneous epitaxial materials of atomic level surface and interface were obtained . The results show that the epitaxial growth rate and Ge composition are controlled by the partial pressures of silane and germane and the growth temperature. The properties of GeSi heteroepitaxial layers were investigated by X-ray double crystal diffraction, extended resistance and electrochemical C-V method