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报道了一种采用非对称布拉格反射波导结构的边发射半导体激光器,激光器n型波导采用分布布拉格反射镜,光场通过光子带隙效应限制在低折射率中心腔内,这可有效扩展光模式尺寸并保持稳定的模式特性。激光器p面则利用全反射原理进行光限制,减小了光场与p型区的交叠,从而使器件电阻和内部损耗降低。制备的3μm条宽、未镀膜及未封装的器件在室温条件下,连续和脉冲工作总输出功率分别可超过160mW和400mW,最高功率受热扰动限制。激光器激射波长为995nm,阈值电流特征温度为121K。计算和测量的垂直方向远场光斑证明了器件工作于光子晶体缺陷模式。
An edge-emitting semiconductor laser with an asymmetric Bragg reflector waveguide structure is reported. A distributed Bragg reflector is used for the n-type waveguide of the laser, and the light field is confined within the low-index central cavity through the photonic bandgap effect. This effectively extends the optical mode size And maintain a stable mode characteristic. The p-plane of the laser uses the principle of total reflection to limit the light, reducing the overlap of the light field and the p-type region, thereby reducing the device resistance and internal loss. The prepared 3μm wide, uncoated and unpackaged devices can output more than 160mW and 400mW continuous and pulsed total output power respectively at room temperature. The maximum power is limited by thermal disturbance. Laser lasing wavelength of 995nm, the threshold current characteristic temperature of 121K. The calculated and measured vertical far-field spot demonstrates that the device operates in photonic crystal defect mode.