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对一种256 kb EEPROM电路AT28C256和一种256 kb SRAM电路HM62256开展了“强光一号”瞬时剂量率效应实验,测量了存储器的闩锁效应、翻转效应等。HM62256的翻转阈值为9.0×106 Gy(Si)/s,闩锁阈值高于5.4×107 Gy(Si)/s。AT28C256的闩锁阈值为2×107 Gy(Si)/s,存储单元翻转阈值高于3.0×108 Gy(Si)/s。对于SRAM,其翻转阈值远低于闩锁阈值;而对于EEPROM,在瞬时辐照下,闩锁阈值远低于存储单元的翻转阈值。基于两种存储器的数据存储原理,分析了SRAM和EEPROM瞬时剂量率效应差异的原因。
An experiment was carried out on the “HITACHI” instantaneous dose rate effect experiment on a 256 kb EEPROM circuit AT28C256 and a 256 kb SRAM circuit HM62256 to measure the memory latch effect and flip effect. The flip threshold of HM62256 is 9.0 × 106 Gy (Si) / s, and the latch-up threshold is higher than 5.4 × 107 Gy (Si) / s. The latch-up threshold for the AT28C256 is 2 × 107 Gy (Si) / s, and the memory cell inversion threshold is higher than 3.0 × 108 Gy (Si) / s. For SRAM, the rollover threshold is well below the latch-up threshold, whereas for EEPROM, the latch-up threshold is well below the rollover threshold of the memory cell for transient irradiation. Based on the data storage principle of the two memories, the reasons for the difference in instantaneous dose rate effects between SRAM and EEPROM are analyzed.