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美国德托通用能源设备公司研究了由充分控制杂质的物理气相沉积法生产显微结构的铌-硅化铌的可能性。利用电子束蒸发可达到在适当真空条件下控制杂质的要求。在铌和硅的元素层结构中,NbSi_2是退火形成的第一相。600℃时在铌和硅界面处 NbSi_2相的生长速率为35(?)/min。Nb_5Si_3相在900℃于 Nb 和 NbSi_2界面处成核。在共沉积的条件下,与生成 Nb_5Si_3、NbSi_2的全部成分范围相近的薄膜是由旁路生成的。
The United States Delto General Energy Equipment Company studied the possibility of producing microstructured niobium-niobium silicide by physical vapor deposition with sufficient control of impurities. The use of electron beam evaporation can be achieved under the conditions of appropriate vacuum impurity requirements. In the elemental layer structure of niobium and silicon, NbSi 2 is the first phase formed by annealing. The growth rate of NbSi_2 phase at niobium and silicon interface is 35 (?) / Min at 600 ℃. The Nb_5Si_3 phase nucleates at the interface of Nb and NbSi_2 at 900 ℃. Under the conditions of co-deposition, the film with the similar composition of Nb5Si3 and NbSi2 is generated by bypass.