论文部分内容阅读
铁电薄膜存储器(FRAM)由于具有动态随机存储器(DRAM)快速读写功能和可擦写唯读存储器(EPROM)非挥发性,又具有抗辐照、功耗低等特性,已成为国际上固态器件研究的一个热点。铁电存储器常用的铁电材料是Pb(ZrTi)O_3(PZT)等氧化物钙钛矿结构材料。由于这些铁电材料抗疲劳性能较差,阻碍了铁电存储器的商品化进程。de Araujo等人报道了铋系层状类钙钛矿结构的铁电薄膜具有抗疲劳特性,用这类铁电材料制作的铁电存储器,在10~(12)次重复开关极化后,仍没有显示疲劳现象,并且具有很好的信息储存寿命和较低的漏电流。
Ferroelectric thin-film memory (FRAM) has become an international solid state for its features of fast read and write of dynamic random access memory (DRAM) and non-volatile erasable programmable read-only memory (EPROM) A hot spot in device research. Ferroelectric memory commonly used ferroelectric material is Pb (ZrTi) O_3 (PZT) and other oxide perovskite materials. Due to the poor fatigue resistance of these ferroelectric materials, the commercialization of ferroelectric memory is hampered. de Araujo et al. reported that the bismuth-based layered perovskite-type ferroelectric thin films have anti-fatigue properties. After ferroelectric memory made of such ferroelectric materials, after 10 to 12 repetitive switching polarizations, Did not show the phenomenon of fatigue, and has good information storage life and low leakage current.