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在低的衬底温度(约300℃)下生长的GaAs层具有较高的电阻率,较小的光敏特性。低温生长的GaAs层用于MESFET作缓冲层,能够消除背栅效应,改善光敏特性等。国外研究结果表明,低温GaAs缓冲层为富砷结。 用国产MBE—Ⅲ型分子束外延设备进行低温生长GaAs层的研究。半绝缘GaAs衬底温度约580℃,生长约50nm GaAs层。反射高能电子衍射(RHEED)的衍射图样为(2×4)结构。然
GaAs layers grown at low substrate temperatures (about 300 ° C) have higher resistivity and less photosensitive properties. The GaAs layer grown at low temperature is used as a buffer layer for the MESFET, which can eliminate the back gate effect and improve the photosensitive property. Foreign research results show that low temperature GaAs buffer layer is rich arsenic. Study on Growth of GaAs Layer by Domestic MBE-Ⅲ Molecular Beam Epitaxy Equipment. The temperature of the semi-insulating GaAs substrate is about 580 ° C., and about 50 nm GaAs layer is grown. The diffraction pattern of Reflective High Energy Electron Diffraction (RHEED) is (2 × 4) structure. Of course