对于迅速发展中的、应用硅外延层的半导体器件和集成电路来说,制得厚度均匀与电阻率可控、表面质量良好的外延层是很重要的。淀积工艺的若干改进促使实现这种均匀性和表面质量。主要包括反应管的形状和合理的结构设计。用于硅汽相淀积的反应器的设计基本上有三种:即立式、桶式、和卧式。立式反应器采用转动或不转动的台式基座,由反应室外部加热。反应气体可以由反应室的顶部或底部引入反应室。这两种情况中,当气体接近基座和在不同的垂直面碰撞衬底时产生骚动。桶式反应器一次可淀积大量的片子。片子放置在反应室外部加热的旋转的圆筒基座上。在卧式结构中,片子 For a rapidly developing semiconductor device and integrated circuit using a silicon epitaxial layer, it is important to produce an epitaxial layer of uniform thickness and resistivity with good surface quality. Several improvements in the deposition process have contributed to achieving this uniformity and surface quality. Mainly include the shape of the reaction tube and reasonable structural design. Reactors designed for silicon vapor deposition are basically designed in three ways: vertical, barrel, and horizontal. The vertical reactor is a rotating or non-rotating bench base heated by the outside of the reaction chamber. The reaction gas may be introduced into the reaction chamber from the top or bottom of the reaction chamber. In both cases, turbulence is generated as gas approaches the susceptor and collides with the substrate at different vertical planes. Barrel reactors can deposit a large number of sheets at a time. The sheet is placed on a rotating cylindrical base heated externally of the reaction chamber. In horizontal structure, the film