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A large signal model for InP/InGaAs double heterojunction bipolar transistors including thermal effects has been reported,which demonstrated good agreements of simulations with measurements.On the basis of the previous model in which the double heterojunction effect,current blocking effect and high current effect in current expression are considered,the effect of bandgap narrowing with temperature has been considered in transport current while a formula for model parameters as a function of temperature has been developed.This model is implemented by Verilog-A and embedded in ADS.The proposed model is verified with DC and large signal measurements.
A large signal model for InP / InGaAs double heterojunction bipolar transistors including thermal effects has been reported, which exhibits good agreements of simulations with measurements. On the basis of the previous model in which the double heterojunction effect, current blocking effect and high current effect in current expression are considered, the effect of bandgap narrowing with temperature has been considered in transport current while a formula for model parameters as a function of temperature has been developed. This model is implemented by Verilog-A and embedded in ADS.The proposed model is verified with DC and large signal measurements.