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InAlN/GaN/AlGaN双异质结材料可以兼顾较高的二维电子气浓度和较好的载流子限域性,适宜制备Ka波段及以上微波功率器件。使用金属有机物气相外延方法,在SiC衬底上生长高性能InAlN/GaN/AlGaN双异质结构材料并制备了栅长为0.2μm的异质结场效应晶体管。测试结果表明,在栅压+2 V时器件的最大电流密度为1.12 A/mm,直流偏置条件VDS为+15 V和VGS为-1.6 V时,最高输出功率密度为2.1 W/mm,29 GHz下实现功率附加效率(ηPAE)为22.3%,截止频率fT达到60 GHz,最高振荡频率fmax为105 GHz。就功率密度和功率附加效率而言,是目前报道的Ka波段InAlN/GaN/AlGaN双异质结场效应晶体管研究的较好结果,也说明了InAlN/GaN/AlGaN双异质结材料良好的应用前景
InAlN / GaN / AlGaN double heterojunction materials can take into account the higher two-dimensional electron gas concentration and better carrier confinement, and are suitable for preparing Ka-band and above microwave power devices. A high-performance InAlN / GaN / AlGaN double heterostructure material was grown on a SiC substrate by using a metal organic vapor phase epitaxy method and a heterojunction field effect transistor with a gate length of 0.2 μm was prepared. The test results show that the maximum output current density of 1.12 A / mm at gate voltage of +2 V and 2.1 W / mm at DC bias of +15 V VDS and -1.6 V VGS is 29 (ΗPAE) is 22.3% at GHz, the cutoff frequency fT reaches 60 GHz and the maximum oscillation frequency fmax is 105 GHz. In terms of power density and power added efficiency, it is a good result of the research on Ka-band InAlN / GaN / AlGaN double heterojunction field-effect transistors reported so far and also shows the good application of InAlN / GaN / AlGaN double heterojunction materials prospect