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本文提出一个用PVT法生长S iC晶体的坩埚的新颖设计。分析了生长腔中有无锥形档板对腔内及籽晶温度场的影响;比较了档板取不同厚度时S iC粉源升华面和籽晶表面的温度分布。得出了在腔内增设档板后晶体生长面的温度更趋均匀的结论;获取了随着档板厚度的增加,腔内的轴向温度梯度随之增加,但同时晶体生长面的温度也会降低的设计原则。根据计算结果,选取档板厚度等于2mm为优化参数。
This paper presents a novel design of a crucible that grows SiC crystals using the PVT method. The influence of the presence or absence of tapered baffles in the cavity on the temperature field in the cavity and in the seed crystal was analyzed. The temperature distributions on the sublimation and seed surfaces of the S iC sources were compared with different thickness of baffles. It is concluded that the temperature of the growth surface of the crystal becomes more uniform after the baffle is added in the cavity. With the increase of the thickness of the baffle, the axial temperature gradient in the cavity increases, but the temperature of the crystal growth surface Will reduce the design principles. According to the calculation results, select the baffle thickness equal to 2mm for the optimization parameters.