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传统噪声理论提取背散射系数时,引入的参量较多并依赖量子力学计算,或是采取大量的假设而使得到的结论存在偏差.本文将基于Navid模型推导MOSFET噪声的背散射系数,进一步得到了短沟道器件在线性区和饱和区的背散射系数,并给出测量背散射系数的方法.在此基础上,对背散射系数随沟道长度、偏置电压和温度的变化特性进行分析,除此之外,用实验和Monte Carlo模拟验证了背散射系数与偏置电压特性,该方法得到的背散射系数与各参量的变化特性与文献给出的结果相吻合.
When traditional backscattering coefficient is extracted by traditional noise theory, more parameters are introduced and rely on quantum mechanics calculation, or a large number of assumptions are made to make the conclusion there is a deviation.This paper will deduce the backscattering coefficient of MOSFET noise based on Navid model, The backscattering coefficient of the short channel device in the linear region and the saturation region and the method of measuring the backscattering coefficient are given.On the basis of this, the backscattering coefficient is analyzed with the variation of channel length, bias voltage and temperature, In addition, backscattering coefficient and bias voltage characteristics were verified by experiments and Monte Carlo simulations. The backscattering coefficient obtained by this method and the variation characteristics of each parameter are consistent with the results given in the literature.