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前言GaAs霍尔元件由于其具有高灵敏度和高稳定性而受到重视。为此,试制了外延GaAs霍尔元件(厚度2微米,n=2×10~(16)cm~(-3))现将实验情况报告如下。实验方法以电流端子处的电阻作为输入电阻。以输出端子处所产生的电压作为霍尔电压。尽可能用恒定电流电源,调到1毫安,来测定其特性。由于在-20℃～+80℃范围内,温度特性参数几乎都呈线性变化,故各种温度系数均按常温和80℃值的平均值来计算。实验结果制作了四种不同形状的霍尔元件,并对其特性进行了研究。图1示出了取决于磁场的霍尔电压的变化。霍尔电压的数值由于霍尔元件
Introduction GaAs Hall elements are valued for their high sensitivity and high stability. To this end, the trial production of epitaxial GaAs Hall element (thickness 2 microns, n = 2 × 10 ~ (16) cm ~ (-3)) The experimental report is as follows. The experimental method uses the resistance at the current terminal as the input resistance. The voltage generated at the output terminal is used as the Hall voltage. As far as possible with a constant current power supply, transferred to 1 mA, to determine its characteristics. Since in the range of -20 ° C to + 80 ° C, the temperature characteristic parameters almost linearly change, all kinds of temperature coefficients are calculated according to the average values of normal temperature and 80 ° C. Experimental results Four different shapes of Hall elements were fabricated and their characteristics were studied. Figure 1 shows the change in Hall voltage depending on the magnetic field. The value of the Hall voltage due to the Hall element