一、引言 虽然早在1968年就有人用激光辐照的方法制成了si的p-n结,但直到1976年,离子注入半导体的激光退火才引起了人们的充分注意。由于看到了激光处理半导体这一课题不仅具有深刻的理论意义而且可能有重大的实用价值,故近几年来,美、苏、英、日、意等国开展了大量的研究工作。虽然尚未正式投入工业生产流程,但在激光退火、激光掺杂、激光合 I. INTRODUCTION Although the p-n junction of Si was made by laser irradiation as early as 1968, it was not until 1976 that laser annealing of ion-implanted semiconductors attracted full attention. In the recent years, a great deal of research work has been carried out in the United States, the Soviet Union, Britain, Japan, Italy and other countries because of the profound theoretical significance and the great practical value of seeing the laser processing of semiconductors. Although not formally put into industrial production process, but in laser annealing, laser doping, laser combination