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本文讨论了晶体管最高振荡频率有关因素的一种测量分析方法。利用在基极和集电极迴路中串入外加串联电阻后测量最高振荡频率的变动,可以同时获得晶体管共发射极短路电流放大零增益频率f_T、基极电阻γ_b、集电极电容C_c以及本征的特性频率f_(Td)。讨论了当基极层厚度调制作用所致的集电极电导起作用时的分析方法。最后分析了漂移晶体管最高振荡频率与晶体管外部参数的关系,结果说明,上述方法在考虑了适应于漂移晶体管的修正步骤后,除同样能得到f_(Td)、γ_b、C_c等有关参数外,还可以分析得出漂移晶体管基极层中的漂移电场强度。
This article discusses a method of measurement and analysis of the factors that determine the maximum oscillation frequency of a transistor. By using the variation of the highest oscillation frequency measured after the series resistance is added into the base and collector loops, the common emitter short-circuit current amplification zero-gain frequency f_T, the base resistance γ_b, the collector capacitance C_c and the intrinsic Characteristic frequency f_ (Td). The method of analysis when the collector conductance due to the base layer thickness modulation is discussed is discussed. Finally, the relationship between the maximum oscillation frequency of the drift transistor and the external parameters of the transistor is analyzed. The results show that the above method not only can obtain the relevant parameters of f_ (Td), γ_b, C_c, The drift electric field strength in the base layer of the drift transistor can be analyzed.