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在室温下用低能量Ａｒ＋轰击ＭＯＳ电容器背面，能改善ＳｉＯ２－Ｓｉ系统的界面特性和击穿特性。结果表明，随着轰击时间的增加，固定电荷密度、界面态密度和漏电流减少，高场击穿的比率增大，然后这些参数变化平缓并开始呈恶化趋势。轰击能量为５５０ｅＶ和束流密度为０．５ｍＡ／ｃｍ２时的效果比在３５０ｅＶ和０．３ｍＡ／ｃｍ２时的好。当硅衬底从４５０μｍ减至３００ｍ时，界面态密度和固定电荷密度的减小更明显。本文还对势垒高度进行了计算，并利用吸除及应力补偿的机理对结果进行了分析。
Striking the back surface of the MOS capacitor with low energy Ar + at room temperature can improve the interfacial properties and breakdown characteristics of the SiO2-Si system. The results show that with the increase of bombardment time, the fixed charge density, interface state density and leakage current decrease, and the ratio of high-field breakdown increases. Then these parameters change gently and begin to deteriorate. The effect of bombardment energy at 550 eV and beam current density of 0.5 mA / cm2 is better than at 350 eV and 0.3 mA / cm2. When the silicon substrate is reduced from 450μm to 300m, the decrease of interface state density and fixed charge density is more obvious. The barrier height was also calculated and the results were analyzed using the mechanism of suction and stress compensation.