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Highly ordered TiO_2 nanotube arrays(NTAs) on Si substrate possess broad applications due to its high surfaceto-volume ratio and novel functionalities, however, there are still some challenges on facile synthesis. Here, we report a simple and cost-effective high-field(90–180V) anodization method to grow highly ordered TiO_2 NTAs on Si substrate,and investigate the effect of anodization time, voltage, and fluoride content on the formation of TiO_2 NTAs. The current density–time curves, recorded during anodization processes, can be used to determine the optimum anodization time. It is found that the growth rate of TiO_2 NTAs is improved significantly under high field, which is nearly 8 times faster than that under low fields(40–60 V). The length and growth rate of the nanotubes are further increased with the increase of fluoride content in the electrolyte.
Highly ordered TiO 2 nanotube arrays (NTAs) on Si substrates possessing broad applications due to its high surfaceto-volume ratio and novel functionalities, however, there are still some challenges on facile synthesis. Here, we report a simple and cost-effective high-field The current density-time curves, recorded during anodization processes, can It is found that the growth rate of TiO_2 NTAs is improved significantly under high field, which is nearly 8 times faster than that under low fields (40-60 V). The length and growth rate of the nanotubes are further increased with the increase of fluoride content in the electrolyte.