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针对InSb红外焦平面芯片中InSb与Si读出电路热膨胀系数不匹配导致芯片龟裂及铟柱断裂现象,开展了Si基InSb红外焦平面探测器(FPA)的研究。运用磨抛减薄技术及金刚石点切削技术对芯片背面进行精确减薄,得到厚度为15μm的InSb芯片;研究了在InSb芯片和Si片上溅射及蒸发减反膜工艺,得到InSb芯片和Si片粘贴后红外中短波光谱的透过率高达88%;对器件的整体工艺路线进行了探索,最终制备出Si基128×128元InSb红外焦平面探测器器件,测试结果表明:器件探测率、响应率及串音等性能指标达到传统工艺制备的器件性能指标;经温冲试验后测试器件结构保持完好,性能未发生变化,证明该工艺路线可解决芯片受应力冲击而产生的铟柱断裂及芯片龟裂的现象,可有效提高InSb焦平面探测器芯片的成品率。
Aiming at the phenomenon of chip crack and indium column fracture caused by the mismatch of thermal expansion coefficient between InSb and Si readout circuits in InSb IRFPA, a Si-based InSb infrared focal plane detector (FPA) was developed. In this paper, the InSb chip with a thickness of 15μm was obtained by thinning the backside of the chip by using the grinding and polishing technique and the diamond point cutting technology. The sputtering and evaporation antireflective film on the InSb chip and Si chip were studied to obtain the InSb chip and the Si chip After the pasted infrared shortwave spectrum transmittance of up to 88%; the overall process of the device was explored, and finally prepared a Si-based 128 × 128 element InSb infrared focal plane detector device, the test results show that: the device detection rate, response Rate, crosstalk and other performance indicators to achieve the performance of the device prepared by traditional process performance indicators; After the temperature and the impact of the test device structure remains intact, the performance did not change, that the process route to solve the stress caused by the impact of the chip indium column fracture and chip Cracking phenomenon, which can effectively improve the InSb focal plane detector chip yield.