本文论述了利用双极晶体管的电参数研究不同能量中子辐照时的相对损伤的理论基础,叙述了半导体器件受三种不同能量中子辐照的损伤结果,指出三种能谱的相对损伤比。在实验基础上,拟合出一个归一化的器件损伤常数与辐照中子能量关系的经验公式。 This paper discusses the theoretical basis of using the bipolar transistor’s electrical parameters to study the relative damage caused by different energy neutron radiation. The damage results of semiconductor devices irradiated by three different energy neutrons are described, and the relative damage of the three energy spectra ratio. Based on the experiment, an empirical formula of the normalized damage constant and the irradiated neutron energy is fitted.