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我们采用静电偏转电子束的方式,在JXA-3A型电子探针内实现了脉冲电子束激发(这种方式使电子束脉冲重复频率限制在1GHz以下)。在该频闪电子束系统中,我们研究了GaAsP材料的瞬态阴极发光(瞬态CL)。讨论了瞬态CL与激发电子束脉冲宽度的关系,测量了GaAs0.35P0.65:N(80°K)的瞬态CL的时间响应曲线,从而得到GaAs0.35P0.65:N(80°K)的瞬态CL时间。
We use a method of electrostatic deflection of the electron beam to achieve pulsed electron beam excitation within the JXA-3A type of electron probe (in this way, the electron beam pulse repetition frequency is limited to below 1 GHz). In this stroboscopic electron beam system, we investigated transient cathodoluminescence (transient CL) of GaAsP materials. The relationship between the transient CL and the pulse width of the excited electron beam was discussed. The time response curve of the transient CL of GaAs0.35P0.65: N (80 ° K) was measured, and the GaAs0.35P0.65: N (80 ° K ) Of the transient CL time.