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研究了铝和铝合金膜的一种新的等离子体刻蚀技术,在平行板型等离子体装置中使用含氯的气体。在这种系统中,我们使用CCl_4和在CCl_4中混合C_2H_4的气体作为刻蚀气体。研究铝和铝合金膜的刻蚀特性如下:
A new plasma etching technique has been studied for aluminum and aluminum alloy films using a chlorine-containing gas in a parallel plate plasma apparatus. In this system, we use CCl 4 and C 2 H 4 mixed with CCl 4 as the etching gas. Study of aluminum and aluminum alloy film etching characteristics are as follows: