论文部分内容阅读
用脉冲激光沉积法在(111)Si衬底上成功制备了高度择优取向的Fe3O4薄膜.电阻-温度关系表明Fe3O4薄膜的Verwey转变(TV)约在122K,低温段(TTV)为小极化子输运.激光作用下的光电导实验发现,在整个温区表现为光致电阻率减小,而且低温段的电阻变化率比高温段要大很多.分析认为Fe3O4薄膜的光致电阻率变化主要与激光激发t2g电子的转移有关.
The highly preferred orientation of Fe3O4 thin films was successfully prepared on (111) Si substrate by pulsed laser deposition.The resistance-temperature relationship showed that the Verwey transition (TV) of Fe3O4 films was about 122K and the transport characteristics of low temperature (T TV) is a small polaron transport.The photoconductivity experiment under the laser shows that the photoinduced resistivity decreases in the whole temperature region and the resistance change in the low temperature region The rate is much larger than the high temperature segment.Analysis that the photo-resistivity of the Fe3O4 thin film changes mainly with the laser-excited t2g electron transfer related.