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本文报道在晶格失配ＧａＡｓ衬底上分子束外延ＨｇＣｄＴｅ薄膜的位错密度研究结果．用位错腐蚀坑密度（ＥＰＤ）、Ｘ射线双晶衍射以及透射电子显微镜方法，对ＣｄＴｅ缓冲层以及ＨｇＣｄＴｅ薄膜的位错密度、其纵向分布及与工艺条件的相关关系进行了评价、分析．研究发现退火可以有效地降低ＨｇＣｄＴｅ薄膜的位错密度．
This paper reports the results of dislocation density studies on HgCdTe films grown on lattice-mismatched GaAs substrates. The dislocation density, longitudinal distribution and the relationship between the dislocation density and the process conditions of the CdTe buffer layer and the HgCdTe thin film were evaluated and analyzed by using the density of dislocated etch pits (EPD), X-ray double crystal diffraction and transmission electron microscopy. It is found that annealing can effectively reduce the dislocation density of HgCdTe films.