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对Zn在N-GaSb晶片中的扩散过程进行了实验研究和分析。实验中采用“准密封”扩散方法,使用纯Zn和纯Sb作为扩散源,通过SIMS(二次离子质谱仪)测量,得出了不同扩散时间和扩散温度下的Zn扩散曲线。经分析,发现扩散源用量对SIMS测量和实验结果有很大影响,在此基础上得出了较为理想的Zn扩散曲线所对应的工况。计算了不同Zn扩散曲线对应的内量子效率,计算结果表明,扩散实验得到的晶片经精确刻蚀后的内量子效率接近70%。
The diffusion process of Zn in N-GaSb wafers was experimentally studied and analyzed. In the experiment, the “quasi-seal” diffusion method was used. Pure Zn and pure Sb were used as diffusion sources. The diffusion curves of Zn at different diffusion times and diffusion temperatures were obtained by SIMS (secondary ion mass spectrometry). After analysis, it is found that the amount of diffusion source has a great influence on SIMS measurement and experimental results, and on the basis of this, the ideal condition of Zn diffusion curve is obtained. The internal quantum efficiencies corresponding to different Zn diffusion curves are calculated. The calculated results show that the internal quantum efficiency of the wafer obtained after the diffusion experiment is close to 70%.