准静态枝术是测量Si—SiO_2界面态按能量分布的一个简单迅速的方法。可测禁带中央约0.4ev范围的界面态分布和表面势。在禁带中央,×10~(10)数量级的界面态测量误差小于26%,×10~9数量级绝对误差在本数量级,×10~(11)数量级误差小于10%。目前用来测N_A=4×10~(14)/cm~3的P—Si氧化界面态。 Quasi-static technique is a simple and quick method to measure the energy distribution of Si-SiO 2 interface states. Measurable forbidden band center of about 0.4ev interface state distribution and surface potential. In the center of forbidden band, the measurement error of the interface state on the order of 10 ~ (10) is less than 26%. The absolute error of the order of 10 ~ 9 is on the order of magnitude, and the error on the order of 10 ~ (11) is less than 10%. Currently used to measure the N_A = 4 × 10 ~ (14) / cm ~ 3 P-Si oxidation interface state.