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用化学气相沉积（CVD）金刚石表面金属化，制备了多层膜Cr／Cu／Ni／Au，膜层与CVD金刚石基体间的附着强度高。运用X射线衍射（XRD）、扫描电镜（SEM）和差热分析（DTA）对Cr／CVD金刚石界面进行了分析，发现在金属化温度低于300℃时，Cr与CVD金刚石之间无化学反应，并对附着机制进行了探讨。在对Cr／CVD金刚石进行热处理时发现，在474．6～970℃之间，DTA曲线有明显的吸热效应，即界面有化学反应产生。在经900℃左右热处理后，XRD分析界面有Cr3C2和Cr7C3生成。
The multilayer film Cr / Cu / Ni / Au was prepared by chemical vapor deposition (CVD) diamond surface metallization. The adhesion between the film and the CVD diamond matrix was high. The Cr / CVD diamond interface was analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and differential thermal analysis (DTA). It was found that there was no chemical reaction between Cr and CVD diamond at the metalization temperature below 300 ℃ , And discussed the attachment mechanism. In the heat treatment of Cr / CVD diamond, it is found that there is a significant endothermic effect on the DTA curve at 474.6 ~ 970 ℃, that is, the interface has a chemical reaction. After heat treatment at about 900 ℃, XRD analysis of the interface Cr3C2 and Cr7C3 generation.