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采用溶胶-凝胶法,以CuCl2.2H2O和InCl3.4H2O为阳离子反应物,硫脲为硫源,去离子水为溶剂在玻璃衬底上制备CuInS2薄膜,在Ar气氛条件下400℃退火1 h。利用XRD衍射仪、扫描电子显微镜、NKD-7000 W光学薄膜分析系统等现代测试手段,研究了不同反应物Cu/In/S摩尔比对薄膜的晶相结构、表面形貌和光学性能的影响。结果表明:所制备的CuInS2薄膜为黄铜矿结构,沿(112)面择优取向生长。反应物Cu/In/S摩尔配比为1.5∶1∶6所生长的CuInS2薄膜晶粒尺寸分布均匀,表面平整致密。CuInS2薄膜的光学带隙宽度在1.97~2.05 eV范围内变化。
The CuInS2 films were prepared on glass substrates by sol-gel method using CuCl2.2H2O and InCl3.4H2O as the cationic reactants, thiourea as the sulfur source and deionized water as the solvent, annealing at 400 ℃ for 1 h under Ar atmosphere . The influence of Cu / In / S molar ratio on the crystal structure, surface morphology and optical properties of the films was investigated by XRD, scanning electron microscopy and NKD-7000 W optical film analysis system. The results show that the prepared CuInS2 thin film has chalcopyrite structure and grows preferentially along the (112) plane. The molar ratio of Cu / In / S reactant is 1.5: 1: 6. The grown CuInS2 thin films have uniform grain size distribution and even and compact surface. The optical band gap width of CuInS2 thin films varied from 1.97 to 2.05 eV.