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高效肖特基半导体整流器 巴西北卡罗利纳大学功率半导体研究中心的B.J.Baliga和M.Mehrotra博士研制出的半导体电源整流器,在电源中应用能极大地提高效率。他们发明的新的器件结构可把淀积浓度提高一个数量级,高的淀积浓度能把器件里的导通电压降由一般器件的0.5V降到0.2V,故改进了效率。一般来说,淀积浓度提高一个数量级,器件的击穿电压降至9.5V。 这种称作沟道MOS势垒肖特基(TMBS)整流
High Efficiency Schottky Rectifier Semiconductor Power Rectifiers, developed by B. J. Baliga and M. Mehrotra, Ph.D., Power Semiconductor Research Center, University of North Carolina at Brazil, are used to greatly improve efficiency in power supplies. They invented a new device structure can increase the deposition concentration by an order of magnitude, the high deposition concentration in the device can be turned on voltage drop from 0.5V general device to 0.2V, thus improving efficiency. In general, the deposition concentration increased by an order of magnitude, the breakdown voltage dropped to 9.5V. This is called channel MOS barrier Schottky (TMBS) rectification